Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
544562 | Microelectronic Engineering | 2011 | 5 Pages |
Abstract
This work discusses a method for measuring k-values of low-k films after integration in damascene structures. The experimental results are obtained from 90 nm ½ pitch single damascene structures on low-k materials with intrinsic k-values ranging between 2.2 and 3. The measurement technique is discussed in detail with a focus on the accuracy, limitation of the method, impact of low-k damage and applicability for smaller dimensions.
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Authors
B. Vereecke, M. Pantouvaki, I. Ciofi, G.P. Beyer, Zs. Tökei,