| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544562 | Microelectronic Engineering | 2011 | 5 Pages |
Abstract
This work discusses a method for measuring k-values of low-k films after integration in damascene structures. The experimental results are obtained from 90 nm ½ pitch single damascene structures on low-k materials with intrinsic k-values ranging between 2.2 and 3. The measurement technique is discussed in detail with a focus on the accuracy, limitation of the method, impact of low-k damage and applicability for smaller dimensions.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
B. Vereecke, M. Pantouvaki, I. Ciofi, G.P. Beyer, Zs. Tökei,
