Article ID Journal Published Year Pages File Type
544562 Microelectronic Engineering 2011 5 Pages PDF
Abstract

This work discusses a method for measuring k-values of low-k films after integration in damascene structures. The experimental results are obtained from 90 nm ½ pitch single damascene structures on low-k materials with intrinsic k-values ranging between 2.2 and 3. The measurement technique is discussed in detail with a focus on the accuracy, limitation of the method, impact of low-k damage and applicability for smaller dimensions.

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