Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
544572 | Microelectronic Engineering | 2011 | 4 Pages |
Abstract
Two seed deposition hardware are compared in this paper: a standard Self Ionized Plasma (SIP) standard chamber and a new generation chamber allowing Cu deposition and re-sputtering simultaneously. TEM characterizations exhibits better features coverage for new seed generation thank to process fine tuning. It induces defectivity improvement and void density is reduced with new hardware. Furthermore, reliability performances are improved without degrading parametrical results.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
J. Guillan, K. Haxaire, S. Chhun, E. Richard, M.C. Luche, L. Arnaud, E. Petitprez, C. Monget, D. Galpin, P. Normandon,