| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544573 | Microelectronic Engineering | 2011 | 4 Pages |
Abstract
In this paper we report on Cu plating of through-silicon-vias (TSV-s) using in-house made acidic Cu bath with model additives (SPS, PEG, and JGB). Although the model additives might not be as potent as commercial additives, they have been studied in detail, and their role in Cu plating has been described extensively in scientific literature. This in turn allows deeper insight into how changes in bath composition affect the plating mechanism and Cu via-fill.
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Authors
A. Radisic, O. Lühn, H.G.G. Philipsen, Z. El-Mekki, M. Honore, S. Rodet, S. Armini, C. Drijbooms, H. Bender, W. Ruythooren,