Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
544580 | Microelectronic Engineering | 2011 | 5 Pages |
Abstract
Effects due to 3D level stack on high frequency (HF) properties of 2D self-inductors integrated in the back end of line (BEOL) are investigated. Different stacking processes as Back to Face and Face to Face using a molecular SiO2 bonding or a copper direct bonding are studied in order to determine silicon substrate stack influence on quality factor and frequency bandwidth of 2D self-inductors. Face to Face process with a molecular SiO2 bonding allows improvements of self-inductor performances, better than Back to Face process with a molecular SiO2 bonding and better than Face to Face process using a copper direct bonding.
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Authors
J. Roullard, S. Capraro, E. Eid, L. Cadix, C. Bermond, T. Lacrevaz, A. Farcy, B. Flechet,