| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544580 | Microelectronic Engineering | 2011 | 5 Pages |
Abstract
Effects due to 3D level stack on high frequency (HF) properties of 2D self-inductors integrated in the back end of line (BEOL) are investigated. Different stacking processes as Back to Face and Face to Face using a molecular SiO2 bonding or a copper direct bonding are studied in order to determine silicon substrate stack influence on quality factor and frequency bandwidth of 2D self-inductors. Face to Face process with a molecular SiO2 bonding allows improvements of self-inductor performances, better than Back to Face process with a molecular SiO2 bonding and better than Face to Face process using a copper direct bonding.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
J. Roullard, S. Capraro, E. Eid, L. Cadix, C. Bermond, T. Lacrevaz, A. Farcy, B. Flechet,