Design and analysis of the In0.53Ga0.47In0.53Ga0.47As implant-free quantum-well device structure

The In0.53Ga0.47AsIn0.53Ga0.47As implant-free quantum-well device architecture is optimized to achieve low leakage and high transistor performance by using ensemble Monte Carlo and TCAD simulations tools. The scalability of this device is also investigated with a particular attention to the effect of the lateral spacer thickness on the drive current. It is demonstrated that the implant-free quantum-well device maintains a very good electrostatic integrity with scaling. However, the Monte Carlo investigation has shown a large influence of the lateral spacer thickness on the drive current. The presence of a barrier in the transport path below the lateral spacer due to the lack of n-type doping, affects the drive current of this device.