Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix

Si1−xGex nanocrystals (NCs), embedded in Al2O3 matrix, were fabricated on Si (100) substrates by RF-magnetron sputtering technique with following annealing procedure at 800 °C, in nitrogen atmosphere. The presence of Si1−xGex NCs was confirmed by grazing incidence X-ray diffraction (GIXRD), grazing incidence small angle X-ray scattering (GISAXS) and Raman spectroscopy. The influence of the growth conditions on the structural properties and composition of Si1−xGex NCs inside the alumina matrix was analyzed. Optimal conditions to grow Si1−xGex (x∼ 0.8) NCs sized between 3 and 4 nm in Al2O3 matrix were established.