Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
544677 | Microelectronic Engineering | 2011 | 4 Pages |
Abstract
We report on the fabrication and operation of optical power monitors monolithically integrated on silicon-on-insulator optical chips. The devices consist of near-infrared waveguide pn heterojunction photodiodes in evaporated germanium. The low temperature growth of Ge is compatible with silicon waveguide technology. The photodetectors exhibit typical responsivities of 10–30 mA/W; the power monitors are used with front-end trans-impedance amplifiers based on commercially available operational amplifiers and can operate with optical signals as small as 10 nW, with errors below 0.2% and 2% at 1 and 0.1 μW, respectively.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
L. Colace, V. Sorianello, M. Romagnoli, L. Socci, G. Assanto,