Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
544751 | Microelectronic Engineering | 2011 | 4 Pages |
Abstract
A novel organic-field effect transistor (OFET) has been fabricated. This device is original in the sense that it can be produced in ambient conditions with facile and cost-effective methods. Experimental results surprisingly revealed a high mobility value at the order of 0.38 cm2/Vs, and the gate voltage is also found to be lower than 1 V. The device exhibited excellent transistor characteristics at low voltages. Threshold voltage is around 0.26 V with 103 on/off ratio. The device design is based on high effective capacitance value of a polymer gel, 1 μF, which is sandwiched between glass substrates on which source and drain electrodes were constructed.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Arif Kösemen, Sait Eren San, Mustafa Okutan, Zekeriya Doğruyol, Ahmet Demir, Yusuf Yerli, Büşra Şengez, Engin Başaran, Faruk Yılmaz,