| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544823 | Microelectronic Engineering | 2010 | 7 Pages |
Abstract
The development of an ultra-high-resolution high-dynamic-range infrared optical coherence tomography (OCT) imaging system is reported for the novel purpose of sub-surface inspection of silicon integrated-circuits. This approach utilises an almost octave-spanning supercontinuum source and a balanced-detection scheme in a time-domain OCT configuration to achieve an axial resolution of 2.5 μm in air, corresponding to ∼700 nm in silicon. Examples of substrate thickness profiling and device feature inspection capabilities for additional circuit navigation and characterisation are presented.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
K.A. Serrels, M.K. Renner, D.T. Reid,