| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544850 | Microelectronic Engineering | 2010 | 4 Pages |
Abstract
Here I demonstrate that DNA biopolymer molecules can control the electrical characteristics of conventional Al/n-InP metal–semiconductor contacts. Results show that DNA increases an effective barrier height as high as 0.87 eV by influencing the space charge region of n-InP device with a good rectifying behavior.
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Authors
Ömer Güllü,