| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544857 | Microelectronic Engineering | 2010 | 4 Pages |
Abstract
The electrical characteristics of low-temperature-processing Al2O3 films were studied. With an anodization SiO2 film as a buffer layer, Al2O3 dielectric was grown on it by oxidizing an ultra-thin aluminum film in nitric acid, followed by a surface DAC-ANO compensation. The significant development is, when the Al2O3 film fabrication of this experiment was repeated, which means one more same Al2O3 layer deposition, the sample demonstrated satisfactory electrical properties.
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Authors
Ching-Hang Chen, Jenn-Gwo Hwu,