| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544883 | Microelectronic Engineering | 2009 | 4 Pages |
Abstract
In this paper a quantitative determination of the elemental distributions across a ∼10 nm Ga2O3/GdGaO layer with a Pt metal gate cap on top of an InGaAs/AlGaAs/GaAs substrate is presented. Some effects of annealing on the elemental distribution across the Ga2O3/GdGaO oxide layer are described. The paper also discusses the analysis of the interface GaAs/Ga2O3/GGO at a sub-nm level by high-resolution HAADF STEM imaging.
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Authors
P. Longo, A.J. Craven, M.C. Holland, D.A.J. Moran, I.G. Thayne,