Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
544892 | Microelectronic Engineering | 2009 | 4 Pages |
Abstract
For the first time, we present a comparative study on HfLaSiON and HfLaON gate dielectric with an equivalent oxide thickness (EOT) of 0.8 nm (Tinv = 1.2 nm). A detailed DC analysis of Ion vs. Ioff shows HfLaON performs somewhat better than HfLaSiON. However, positive bias temperature instability (PBTI) lifetime of HfLaSiON is higher than HfLaON by about 2 orders of magnitude. On the other hand, hot carrier stress lifetime for HfLaSiON was similar to that of HfLaON. From the activation energy and U-trap, we found that the cause of different threshold voltage (VT) shifts under PBT stress and detrapping was originated from stable electron traps induced by different charge trapping rates.
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Authors
Won-Ho Choi, In-Shik Han, Hyuk-Min Kwon, Tae-Gyu Goo, Min-Ki Na, Ook-Sang Yoo, Ga-Won Lee, Chang Yong Kang, Rino Choi, Seung Chul Song, Byoung Hun Lee, Raj Jammy, Yoon-Ha Jeong, Hi-Deok Lee,