| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 544917 | Microelectronic Engineering | 2009 | 4 Pages |
Abstract
The paper presents a systematic investigation of dielectric charging in low temperature silicon nitride for RF-MEMS capacitive switches. The dielectric charging is investigated with the aid of Metal-Insulator-Metal (MIM) capacitors with different thickness dielectric film and symmetric and asymmetric metal contacts. The experimental results demonstrate that the charging process is almost symmetric in low temperature deposited silicon nitride. Experiments performed in both MIM and MEMS reveal that the charging process is strongly affected by temperature. Specifically at high temperatures the charging rate increases exponentially with temperature.
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Authors
Richard Daigler, Eleni Papandreou, Matroni Koutsoureli, George Papaioannou, John Papapolymerou,