Kinetic Monte Carlo study on boron diffusion posterior to pre-amorphization implant process

We report our theoretical investigation on the suppression of boron diffusion in the silicon substrate posterior to PAI (pre-amorphization implant) in an effort to understand the mechanism for forming the shallow and abrupt junction. We numerically investigated the defect-generating characteristics of silicon atoms as a new species for pre-amorphization implant (PAI). Our kinetic Monte Carlo (KMC) simulation revealed that Si-PAI produces more interstitials than the case of Ge-PAI while Ge-PAI makes interstitial move further to the surface than the Si-PAI case during the annealing process, which results in the suppression of the boron transient enhanced diffusion (TED).