Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
545045 | Microelectronic Engineering | 2008 | 7 Pages |
Abstract
Ta–N based thin films were grown by thermal atomic layer deposition (ALD) with an alternating supply of the reactant source TBTDET (tert-butylimidotris(diethylamido)tantalum) and NH3 (ammonia). The films were deposited using a newly designed and constructed atomic layer deposition prototype tool combined with several in situ metrology. It was observed that thin films were successfully deposited on a 300 mm Wafer with a saturated growth rate of approximately 0.55 Å/cycle at 270 °C. The as deposited films resulted in the formation of Ta(C)N consisting of 38 at% Ta, 32 at% N and 10 at% C. With in situ spectroscopic ellipsometry (SE) the growing behaviour of the film was investigated and compared to atomic force microscopy (AFM) images.
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Authors
D. Schmidt, S. Strehle, M. Albert, W. Hentsch, J.W. Bartha,