Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
545050 | Microelectronic Engineering | 2008 | 7 Pages |
Abstract
Ternary cobalt–nickel silicide thin films were synthesized by DC magnetron sputtering from an equiatomic cobalt–nickel alloy target. Grazing incidence XRD, Rutherford back scattering, high-resolution cross-sectional TEM analysis and electrical study were carried out to investigate the formation of silicide, stoichiometry, film thickness, depth profile and sheet resistance of as-deposited and post-deposition annealed films. The ternary silicide layer thickness was calculated from RBS simulated data, which was found to vary 20–43 nm for as-deposited and different vacuum annealed films. A minimum value of sheet resistance 2.73 Ω/sq corresponding to a resistivity of ∼8.4 μΩ-cm was obtained for optimized deposition and annealing conditions.
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Authors
D. Panda, A. Dhar, S.K. Ray,