Large area silicon epitaxy using pulsed DC magnetron sputtering deposition

Pulsed DC magnetron sputtering is used for the deposition of large area crystalline (200 mm) silicon 100 nm thin films. p doped Si substrates are flashed (Ts = 900 °C) under high vacuum (5 × 10−6 Pa) for removing native oxide and restoring surface crystallinity. Subsequent boron-doped Si homoepitaxy is obtained at substrate temperature below 500 °C for pulse frequency of 150 kHz.