Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
545124 | Microelectronic Engineering | 2007 | 5 Pages |
International Technology Roadmap for Semiconductors 2003 projected nano-imprint lithography has the potential of high throughput, sub-20 nm resolution, and low cost [S.Y. Chou, P.R. Krauss, P.J. Renstrom, Appl. Phys. Lett. 67 (1995) 3144; Science 272 (1996) 85, J.A. Rogers, C. Mirkin, Mater. Res. Bull. 26 (2001)]. For nano-imprint lithography, a template with 1X resolution is required. The existing industrial infrastructure for supporting deep ultra violet 4X photo masks by e-beam and/or a laser beam scanning writer does not offer pitch (center-to-center distance of an array of patterned lines) less than ∼60 nm [