| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6942479 | Microelectronic Engineering | 2018 | 7 Pages |
Abstract
Schematic showing the gray scale technology (a) the exposure laser intensity variation profile (b) CAD layout of test patterns with different exposure intensity, (c) cross section: in case of a positive PR the “dose to clear” is obtained at the interface between the dark red and the light red pattern. (d) Cross section of the pattern transferred into Si after RIE.124
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Isman Khazi, Uma Muthiah, Ulrich Mescheder,