Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6942722 | Microelectronic Engineering | 2016 | 55 Pages |
Abstract
In this manuscript, we review the use of hexagonal boron nitride as dielectric, paying special attention to the synthesis methods, nanoscale homogeneity, reliability and dielectric breakdown process. In summary, hexagonal boron nitride is much more homogeneous and stable against electrical fields than other 3D dielectrics (such as HfO2) which can provide some advantages like reduced scattering effects and predictable dielectric breakdown process.
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Authors
Fei Hui, Chengbin Pan, Yuanyuan Shi, Yanfeng Ji, Enric Grustan-Gutierrez, Mario Lanza,