Article ID Journal Published Year Pages File Type
6942722 Microelectronic Engineering 2016 55 Pages PDF
Abstract
In this manuscript, we review the use of hexagonal boron nitride as dielectric, paying special attention to the synthesis methods, nanoscale homogeneity, reliability and dielectric breakdown process. In summary, hexagonal boron nitride is much more homogeneous and stable against electrical fields than other 3D dielectrics (such as HfO2) which can provide some advantages like reduced scattering effects and predictable dielectric breakdown process.
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Authors
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