| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6942794 | Microelectronic Engineering | 2016 | 5 Pages |
Abstract
We have carried out both extreme ultraviolet interference lithography and electron beam lithography exposures and confirmed the expansion of the process window towards smaller doses as well as the increase in aspect ratios of resist structures that remain freestanding.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Tero S. Kulmala, Elizabeth Buitrago, Michaela Vockenhuber, Yasin Ekinci,