| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943140 | Microelectronic Engineering | 2015 | 6 Pages |
Abstract
Goal: nanoscale defects, as Threading Dislocations (TD), Stacking Faults (SF), among others, in III-V materials grown over silicon wafers were characterized using a CAFM. The presented results show that the CAFM can help to identify various types of structural defects in III-V materials, as well as measure their conductive characteristic.163
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Authors
V. Iglesias, Q. Wu, M. Porti, M. NafrÃa, G. Bersuker, A. Cordes,