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Simulation of ALD chemistry of (nBu3P)2Cu(acac) and Cu(acac)2 precursors on Ta(110) surface

Article ID Journal Published Year Pages File Type
6943482 Microelectronic Engineering 2015 9 Pages PDF
Keywords
Thermodynamic analysisAtomic layer deposition (ALD)Density functional theory (DFT)
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Preview
Simulation of ALD chemistry of (nBu3P)2Cu(acac) and Cu(acac)2 precursors on Ta(110) surface
Authors
Xiao Hu, Jörg Schuster, Stefan E. Schulz, Thomas Gessner,
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Journal
Microelectronic Engineering
Journal: Microelectronic Engineering
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