| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943500 | Microelectronic Engineering | 2015 | 4 Pages |
Abstract
- Homogeneous Ni(Al) germanosilicide layers are formed on strained SiGe.
- Ni5(SiGe)3 phase is identified.
- Al concentration and annealing temperature influence the formed germanosilicides.
- The optimized process also applies to Si0.55Ge0.45 with higher Ge content.
Keywords
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Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Linjie Liu, Lei Jin, Lars Knoll, Stephan Wirths, Dan Buca, Gregor Mussler, Bernhard Holländer, Dawei Xu, Zeng Feng Di, Miao Zhang, Siegfried Mantl, Qing-Tai Zhao,