| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943520 | Microelectronic Engineering | 2015 | 5 Pages |
Abstract
Silicon nanoparticles (Si NPs) were synthesized by chemical oxidation and etching method and capped using alkanedienyl passivation by covalent attachment of 1,9-decadiene to form resistive switching element. The alkanedienyl passivated Si NPs were in situ copolymerized into polystyrene (PS) matrix with monomer of styrene to form a polymerized resistive switching layer consisting in structure of ITO/PS-Si NPs/Al device. Write-read-erase-read operations controlled by bias were demonstrated in the device. These results can be extended to development for very thin resistive switching device based on organic solution process.
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Authors
Minkeun Kim, Hunsang Jung, Yo-Han Kim, Chi-Jung Kang, Tae-Sik Yoon, Hyun Ho Lee,