| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943632 | Microelectronic Engineering | 2014 | 6 Pages |
Abstract
- Resistive switching in CeOx films are interesting for Nonvolatile Memory Application.
- Raman spectroscopy is used to optimize in situ the post-annealing of CeO2 film.
- The annealing parameters are found more quickly by using Raman characterization.
- A good crystallinity of films is obtained by using in situ Raman characterization.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Y. Guhel, J. Bernard, B. Boudart,