| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943661 | Microelectronic Engineering | 2014 | 9 Pages |
Abstract
- A degradation phenomenon of the Cu6Sn5 IMC in SLID interconnects was found.
- Degradation is caused by porosity due to a corrosive reaction with flux residues.
- Sn is dissolved from the solid Cu6Sn5 IMC during the pore formation.
- The composition of the remaining phase in the pore region is close to Cu3Sn.
- The complete transformation into non-porous Cu3Sn is possible after the removal of the flux residues.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Iuliana Panchenko, Kristof Croes, I. De Wolf, J. De Messemaeker, Eric Beyne, Klaus-Juergen Wolter,