| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943677 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- XPS/UPS was used to examine interface energetics of PBI-4-t-BuPh/metal interfaces.
- No reaction between the substrates and the organic semiconductor was observed.
- An interfacial dipole of 0.5Â eV was found at the PBI-4-t-BuPh/Au interface.
- Vacuum level alignment is observed at the interface with Al.
- Al is a more suitable substrate for OFET applications using PBI-4-t-BuPh.
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Authors
Konstantinos Emmanouil, Pawel Gawrys, Malgorzata Zagorska, Stella Kennou,