| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943690 | Microelectronic Engineering | 2013 | 5 Pages |
Abstract
⺠A rigorous simulation study of a proposed magneto logic gate was carried out. ⺠Horizontal and diagonal current flow switching schemes are feasible. ⺠Scaling the device radii leads to faster switching. ⺠XOR, (N)AND, and (N)OR gates are available by changing the geometric/magnetic set up.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Thomas Windbacher, Oliver Triebl, Dmitry Osintsev, Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr,