| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943697 | Microelectronic Engineering | 2013 | 6 Pages |
Abstract
- Electron energy loss near edge structure spectra of the N-K edge of InxAl1âxN.
- Effect of In in the electronic structure and the bonding environment of N in InAlN.
- Effect of oxygen concentration on the bonding environment of N in AlN.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M.M. Soumelidou, J. Kioseoglou, H. Kirmse, Th. Karakostas, Ph. Komninou,