| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943698 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- The metal-oxide gate stack was realized by a single photolitographic step.
- Low temperature ALD Al2O3 layer was used for MOS gate stack.
- Plasma enhancement and thermal modes were compared.
- MOS devices were evaluated by DC, pulse and C-V measurements.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Michal Blaho, Dagmar GreguÅ¡ová, Michal JurkoviÄ, Å tefan HaÅ¡ÄÃk, Ján Fedor, Peter KordoÅ¡, Karol Fröhlich, Frank Brunner, Melani Cho, Oliver Hilt, Joachim Würfl, Ján KuzmÃk,