ALD deposited ZrO2 ultrathin layers on Si and Ge substrates: A multiple technique characterization

- Ultra thin ZrO2 layers were grown by ALD technique on p-Si, strained Si and p-Ge substrates.
- The stoichiometry, thickness and valence band electronic structure were obtained through XPS analysis.
- AFM measurements suggest that the deposition method is successful for the formation of ultrathin ZrO2.
- C-V and G-V characteristics reveal typical MOS structure behavior, with Dit values of the order of 1012 eV−1 cm−2.