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Theoretical study of oxygen contaminated silicon quantum dots: A case study for Si29H29−xO29−y

Article ID Journal Published Year Pages File Type
6943714 Microelectronic Engineering 2013 4 Pages PDF
Keywords
Oxygen contaminationNanocrystalsDensity functional theoryquantum dots
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Preview
Theoretical study of oxygen contaminated silicon quantum dots: A case study for Si29H29−xO29−y
Authors
Aristides D. Zdetsis, Shanawer Niaz, Emmanuel N. Koukaras,
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Journal
Microelectronic Engineering
Journal: Microelectronic Engineering
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