| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943751 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- The new dry method of some type resists etching in E-beam exposure is proposed.
- The etching mechanism is radical-chain depolymerization of resist to monomer.
- The etching rates of PMMA resist by this method are rather high.
- Proposed method is effective in 3D spatial structures creation.
- This method can increase the productivity and reduces cost of 3D E-beam lithography.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M.A. Bruk, E.N. Zhikharev, D.R. Streltsov, V.A. Kalnov, A.V. Spirin,