| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943787 | Microelectronic Engineering | 2013 | 6 Pages |
Abstract
- Migration of oxygen anions between HfO2 and Ti during the switching.
- Effect of the redox reaction on initial conductivity and switching.
- RESET-first resistive switching engineered by redox reaction with annealing.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Jonggi Kim, Sunghoon Lee, Kyumin Lee, Heedo Na, In-Su Mok, Youngjae Kim, Dae-Hong Ko, Hyunchul Sohn,