Room temperature wafer bonding of metal films using flattening by thermal imprint process

- We developed a new room temperature wafer bonding of metal films using flattening by thermal imprint process.
- Au film surfaces were successfully flattened with a 5 MPa pressure at 200 °C for 600 s.
- Developed room temperature bonding was effective when the bonding load is small and/or the Au films are relatively rough.