Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6943879 | Microelectronic Engineering | 2013 | 6 Pages |
Abstract
- Coexistence of unipolar/bipolar resistive switching in Ti/HfOx/W is investigated.
- Ti/HfOx/W in the negative voltage exhibit arbitrary switching mode transition.
- An improved uniformity of memory window for the device with positive forming.
- The asymmetric O in the HfOx is responsible for the dual resistance switching.
- A plausible dual resistance switching mechanism is proposed.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Pang-Shiu Chen, Yu-Sheng Chen, Kan-Hsueh Tsai, Heng-Yuan Lee,