| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943900 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- Shallow electron traps associated with La and Gd ions have been identified.
- Shallow traps are located in transition layer between silicate and semiconductor.
- Activation energy of emission processes have been determined.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
I.P. Tyagulskii, S.I. Tyagulskii, A.N. Nazarov, V.S. Lysenko, K. Cherkaoui, P.K. Hurley,