| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943904 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- Al diffusion into gate stack leads to EOT reduction.
- Process reduces the EOT at low temperature (400 °C) and is suitable for replacement gate processes.
- Extensive interface studies support the electrical measurements.
- Reactions are in agreement with thermodynamical considerations.
Keywords
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
A. Nichau, A. Schäfer, L. Knoll, S. Wirths, T. Schram, L.-Ã
. Ragnarsson, J. Schubert, P. Bernardy, M. Luysberg, A. Besmehn, U. Breuer, D. Buca, S. Mantl,