| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943907 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
Interface trap densities between single crystalline Ba0.7Sr0.3 O and Si (0Â 0Â 1). Results on p- and n-type substrates. Trap densities between 6 and 9Â ÃÂ 1011Â eVâ1Â cmâ2 were found close to midgap.
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Authors
S. Islam, D. Müller-Sajak, K.R. Hofmann, H. Pfnür,