| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943909 | Microelectronic Engineering | 2013 | 5 Pages |
Abstract
- We report the physical analysis of MG/ZrN/Zr-graded Dy2O3/Si MIS structures.
- The key process parameters such as postannealing temperature and doping location are examined.
- Electrical properties such as flatband voltage shift, leakage current, EOT are shown and calculated.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
P.C. Juan, C.H. Liu, C.L. Lin, F.C. Mong, J.H. Huang,