Article ID Journal Published Year Pages File Type
6943944 Microelectronic Engineering 2013 4 Pages PDF
Abstract

- Polymer/nanowires /Si diodes without H2O2 treatment show a poor rectifying behavior.
- Polymer/nanowires /Si diodes with H2O2 treatment show a good rectifying behavior.
- The interfacial defects of heterojunction devices were controlled by H2O2 treatment.
- Such an improvement indicates that a good passivation is formed at the interface.
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Physical Sciences and Engineering Computer Science Hardware and Architecture
Preview
Electronic transport for polymer/Si-nanowire arrays/n-type Si diodes with and without Si-nanowire surface passivation
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