| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943954 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- Lower Dit is realized for GeOx/Ge interface with higher plasma oxidation temperature.
- Lower plasma oxidation temperature reduces the GeOx/Ge interface roughness.
- A trade-off between Dit and interface roughness is necessary for plasma oxidation.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
R. Zhang, J.C. Lin, X. Yu, M. Takenaka, S. Takagi,