| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943967 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
We have developed the transfer technology of thin post-silicon materials by utilizing high quality heteroepitaxial growth. The single crystal Germanium layer transfer with epitaxial lift-off (ELO) technique on arbitrary substrates has been demonstrated. We also present InGaAs-OI wafers by conventional bonding/etching technique and the low temperature fabrication of InGaAs nMOSFETs. Polyimide is newly implemented in InGaAs nMOSFET fabrication process as an adhesive and an insulating layer on Si.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Tatsuro Maeda, Hiroyuki Ishii, Taro Itatani, Eiko Mieda, Wipakorn Jevasuwan, Yuichi Kurashima, Hideki Takagi, Tetsuji Yasuda, Tomoyuki Takada, Taketsugu Yamamoto, Takeshi Aoki, Takenori Osada, Osamu Ichikawa, Masahiko Hata,