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Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties

Article ID Journal Published Year Pages File Type
6943976 Microelectronic Engineering 2013 5 Pages PDF
Keywords
Synchrotron radiation photoemission spectroscopyMOS deviceHigh-k dielectricsgermanium
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Preview
Ge diffusion and bonding state change in metal/high-k/Ge gate stacks and its impact on electrical properties
Authors
Takuji Hosoi, Iori Hideshima, Ryohei Tanaka, Yuya Minoura, Akitaka Yoshigoe, Yuden Teraoka, Takayoshi Shimura, Heiji Watanabe,
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Journal
Microelectronic Engineering
Journal: Microelectronic Engineering
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