Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6943991 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- Thulium oxide layers on germanium were investigated.
- The valence band offset was found to be 2.95Â eV.
- The band gap of thulium oxide was found to be 5.3Â eV from the Tauc method.
- A sub-band gap absorption at 3.2Â eV points to a bulk thulium oxide defect.
- A permittivity of 14 was derived from electrical measurements.
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Authors
I.Z. Mitrovic, M. Althobaiti, A.D. Weerakkody, N. Sedghi, S. Hall, V.R. Dhanak, P.R. Chalker, C. Henkel, E. Dentoni Litta, P.-E. Hellström, M. Ãstling,