Article ID Journal Published Year Pages File Type
6943991 Microelectronic Engineering 2013 4 Pages PDF
Abstract

- Thulium oxide layers on germanium were investigated.
- The valence band offset was found to be 2.95 eV.
- The band gap of thulium oxide was found to be 5.3 eV from the Tauc method.
- A sub-band gap absorption at 3.2 eV points to a bulk thulium oxide defect.
- A permittivity of 14 was derived from electrical measurements.
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