| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6943997 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- The YGeOx enjoys a low interface trap density of 2.1Â ÃÂ 1011Â cmâ2Â eVâ1.
- Low leakage current of 3.1Â ÃÂ 10â10Â A/cm2 at the effective electric field of 1Â MV/cm.
- 13 mV flatband voltage shift for BTI test under 10 MV/cm for 8000 s at 85 °C.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Min-Lin Wu, Yung-Hsien Wu, Rong-Jhe Lyu, Chun-Yen Chao, Chao-Yi Wu, Chia-Chun Lin, Lun-Lun Chen,