| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6944008 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- Two-step high-pressure sputtering for Gd2O3 deposition on InP substrates.
- Working MIS devices for all sputtering and plasma oxidation conditions.
- High capacitance (CET of 2.4Â nm) with moderate leakage (under 10â3Â AÂ cmâ2 at a gate voltage of 1Â V).
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Enrique San Andrés, MarÃa Ángela Pampillón, Pedro Carlos Feijoo, Raúl Pérez, Carmina Cañadilla,