Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6944065 | Microelectronic Engineering | 2013 | 4 Pages |
Abstract
- Ge interface nitride passivation.
- Si passivation layer thickness.
- SiON surface on Si passivation layer.
- Anneal to eliminate Ge-N bonds.
- Symmetric NMOS and CMOS capacitors.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
G. Lucovsky, J.W. Kim, D. Nordlund,